Diodes Incorporated ZXMN10A25GTA MOSFETs
MOSFET N-CH 100V 2.9A SOT223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
ZXMN10A25GTA
Base Model
Detailed Description
MOSFET N-CH 100V 2.9A SOT223
Package
TO-261-4,TO-261AA
Lifecycle Status
Active
Datasheet
ZXMN10A25GTA Datasheet
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Technical Specifications
Diodes Incorporated ZXMN10A25GTA MOSFETs technical specifications.
General
Series
ZXMN10A
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
4 A
Rds on Drain Source Resistance
125 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (ZXMN10A25GTA vs ZXMN10A08E6TC vs ZXMN10A08E6QTA vs ZXMN10A09KTC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | ZXMN10A | ZXMN10 | Automotive, AEC-Q101 | ZXMN10 |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Compliant | Compliant | Compliant with Exemption |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Quad Drain | Single Quad Drain | Single |
| Maximum Operating Temperature C | + 150 | 150 | 150 | 150 |
| Minimum Operating Temperature C | - 55 | -55 | -55 | -55 |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Fall Time | 9.4 ns | 2.2 ns | -- | 12.3 ns |
| Pd Power Dissipation | 3.9 W | 1.1 W | -- | 10.1 W |
| Rds on Drain Source Resistance | 125 mOhms | 250 mOhms | -- | 100 mOhms |
| Action |
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