Diodes Incorporated DXTN5860DFDB-7 BJTs
SS LOW SAT TRANSISTOR U-DFN2020-
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DXTN5860DFDB-7
Detailed Description
SS LOW SAT TRANSISTOR U-DFN2020-
Package
DFN2020
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DXTN5860DFDB-7 BJTs technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
60 V
Collector Base Voltage Vcbo
60 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
230 mV
Maximum Dc Collector Current
7 A
Alternate Parts Comparison (DXTN5860DFDB-7 vs DXTN26070CY-13 vs DXTN07100BP5-13 vs DXTN07100BFG-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | U-DFN2020-3 | SOT-89-3 | PowerDI-5 | PowerVDFN-8 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 175°C |
| Collector Base Voltage Vcbo | 60 V | -- | 120 V | 120 V |
| Collector Emitter Saturation Voltage | 230 mV | -- | 500 mV | 150 mV |
| Collector Emitter Voltage Vceo Max | 60 V | -- | 100 V | 100 V |
| Configuration | Single | -- | Single | Single |
| Dc Current Gain Hfe Max | 430 at 500 mA, 2 V | -- | 300 | 300 |
| Emitter Base Voltage Vebo | 6 V | -- | 7 V | 7 V |
| Gain Bandwidth Product Ft | 115 MHz | -- | 175 MHz | 175 MHz |
| Maximum Dc Collector Current | 7 A | -- | 2 A | 2 A |
| Action |
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