Diodes Incorporated DMP45H150DHE-13 MOSFETs
MOSFET P-CH 450V 250MA SOT223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMP45H150DHE-13
Base Model
Detailed Description
MOSFET P-CH 450V 250MA SOT223
Package
SOT223-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMP45H150DHE-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
450 V
ID Continuous Drain Current
250 mA
Rds on Drain Source Resistance
40 Ohms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (DMP45H150DHE-13 vs DMP45H21DHE-13 vs DMP45H4D9HK3-13 vs DMP4015SK3Q-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT223-3 | SOT-223-3 | TO-252-3 | TO-252-3 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Single | -- | -- | Single |
| Fall Time | 87 ns | -- | -- | 137.9 nS |
| ID Continuous Drain Current | 250 mA | -- | -- | 35 A |
| Pd Power Dissipation | 13.9 W | -- | -- | 3.5 W |
| Qg Gate Charge | 1.8 nC | -- | -- | 47.5 nC |
| Rds on Drain Source Resistance | 40 Ohms | -- | -- | 11 mOhms |
| Rise Time | 9 ns | -- | -- | 10 ns |
| Action |
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