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Diodes Incorporated DMN63D8LDW-13 MOSFETs

MOSFET 2N-CH 30V 0.22A SOT363

570 ActiveDiodes IncorporatedDMN63DTSSOP-6$0.08
DMN63D8LDW-13 TSSOP-6 package illustration

Same model may have multiple batches, images only for reference.

DMN63D8LDW-13
Part Number (MPN)
DMN63D8LDW-13
Base Model
Detailed Description
MOSFET 2N-CH 30V 0.22A SOT363
Package
TSSOP-6
Lifecycle Status
Active
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Ordering Code Family

DMN63D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

13 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN63D8LDW-13 MOSFETs technical specifications.

General

Series
DMN63
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
260 mA
Rds on Drain Source Resistance
2.8 Ohms

Related Parts Comparison (DMN63D8LDW-13 vs DMN63D0LT-7 vs DMN63D1LDW-7 vs DMN63D1L-13)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesRoHS CompliantYesYes
Mounting TypeSMD/SMT--Surface MountSMD/SMT
PackageTSSOP-6--SOT-363-6SOT23-3
TechnologySi--MOSFET (Metal Oxide)Si
SeriesDMN63----DMN63
Operating Temperature- 55°C ~ + 150°C---55°C ~ 150°C (TJ)--
ConfigurationDual--2 N-Channel (Dual)--
Unit Weight0.000265 oz----0.000282 oz
Number of Channels2 Channel------
Channel ModeEnhancement------
ID Continuous Drain Current260 mA------
Pd Power Dissipation400 mW------
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