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Diodes Incorporated DMN63D8LDW-13 MOSFETs

MOSFET 2N-CH 30V 0.22A SOT363

570 ActiveDiodes IncorporatedDMN63DTSSOP-6$0.08
DMN63D8LDW-13 TSSOP-6 package illustration

Same model may have multiple batches, images only for reference.

DMN63D8LDW-13
Part Number (MPN)
DMN63D8LDW-13
Base Model
Detailed Description
MOSFET 2N-CH 30V 0.22A SOT363
Package
TSSOP-6
Lifecycle Status
Active
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Ordering Code Family

DMN63D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

13 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN63D8LDW-13 MOSFETs technical specifications.

General

Series
DMN63
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
260 mA
Rds on Drain Source Resistance
2.8 Ohms

Alternate Parts Comparison (DMN63D8LDW-13 vs DMN63D0LT-7 vs DMN63D1LDW-7 vs DMN63D1L-13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesRoHS CompliantYesYes
Mounting TypeSMD/SMT--Surface MountSMD/SMT
PackageTSSOP-6--SOT-363-6SOT23-3
TechnologySi--MOSFET (Metal Oxide)Si
SeriesDMN63----DMN63
Operating Temperature- 55°C ~ + 150°C---55°C ~ 150°C (TJ)--
ConfigurationDual--2 N-Channel (Dual)--
Unit Weight0.000265 oz----0.000282 oz
Number of Channels2 Channel------
Channel ModeEnhancement------
ID Continuous Drain Current260 mA------
Pd Power Dissipation400 mW------
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