Diodes Incorporated DMN62D0UDW-7 MOSFETs
MOSFET 2N-CH 60V 0.35A SOT363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN62D0UDW-7
Base Model
Detailed Description
MOSFET 2N-CH 60V 0.35A SOT363
Package
TSSOP-6
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN62D0UDW-7 MOSFETs technical specifications.
General
Series
DMN62D0UDW
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
350 mA
Rds on Drain Source Resistance
2 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN62D0UDW-7 vs DMN62D4LFB-7B vs DMN62D0LFB-7B vs DMN62D0UT-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-6 | X1-DFN-3 | DFN-3 | SOT-523 |
| Technology | Si | Si | Si | Si |
| Series | DMN62D0UDW | -- | -- | DMN62D0U |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 2 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Dual | -- | -- | Single |
| ID Continuous Drain Current | 350 mA | -- | -- | 320 mA |
| Pd Power Dissipation | 410 mW | -- | -- | 340 mW |
| Qg Gate Charge | 500 pC | -- | -- | 500 pC |
| Rds on Drain Source Resistance | 2 Ohms | -- | -- | 2 Ohms |
| Action |
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