Diodes Incorporated DMN6140L-13 MOSFETs
MOSFET N-CH 60V 1.6A SOT23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN6140L-13
Base Model
Detailed Description
MOSFET N-CH 60V 1.6A SOT23
Package
SOT-23
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
DMN6140L-13 Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN6140L-13 MOSFETs technical specifications.
General
Series
DMN614
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
2.3 A
Rds on Drain Source Resistance
140 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN6140L-13 vs DMN6140L-7 vs DMN2053U-7 vs DMN3731U-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 2.7 ns | 2.7 ns | 3.8 ns | 123 ns |
| ID Continuous Drain Current | 2.3 A | 2.3 A | 6.5 A | 900 mA |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 1.3 W | 1.3 W | 1.3 W | 580 mW |
| Qg Gate Charge | 8.6 nC | 8.6 nC | 4.6 nC | 5.5 nC |
| Rds on Drain Source Resistance | 140 mOhms | 140 mOhms | 29 mOhms | 730 mOhms |
| Rise Time | 3.6 ns | 3.6 ns | 2.9 ns | 3.1 ns |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
FDN86501LZonsemiDirectonsemi
Pin YesPkg YesElec Upgrade
MOSFETs N-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mO
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