Diodes Incorporated DMN60H080DS-7 MOSFETs
MOSFET N-CH 600V 80MA SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN60H080DS-7
Base Model
Detailed Description
MOSFET N-CH 600V 80MA SOT23-3
Package
SOT-23-3
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN60H080DS-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
80 mA
Rds on Drain Source Resistance
100 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Threshold Voltage
1.5 V
Alternate Parts Comparison (DMN60H080DS-7 vs DMN60H080DS-13 vs DMN3300U-7 vs DMN2056U-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 158 ns | -- | 24 ns | 1.7 ns |
| ID Continuous Drain Current | 80 mA | -- | 2 A | 4 A |
| Maximum Operating Temperature C | + 150 | -- | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | -- | - 55 | - 55 |
| Pd Power Dissipation | 1.1 W | -- | 600 mW | 940 mW |
| Rds on Drain Source Resistance | 100 Ohms | -- | 150 mOhms | 38 mOhms |
| Action |
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