Diodes Incorporated DMN6075SQ-13 MOSFETs
MOSFET BVDSS: 41V~60V SOT23 T&R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN6075SQ-13
Base Model
Detailed Description
MOSFET BVDSS: 41V~60V SOT23 T&R
Package
SOT23-3
Lifecycle Status
Active
Datasheet
DMN6075SQ-13 Datasheet
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Technical Specifications
Diodes Incorporated DMN6075SQ-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
2 A
Rds on Drain Source Resistance
85 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (DMN6075SQ-13 vs DMN6075SQ-7 vs DMN6075S-7 vs DMN3730U-7)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 11 ns | 11 ns | 11 ns | 13 ns |
| ID Continuous Drain Current | 2 A | 2 A | 2.5 A | 940 mA |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 800 mW | 800 mW | 1.15 W | 710 mW |
| Qg Gate Charge | 12.3 nC | 12.3 nC | 12.3 nC | 1.6 nC |
| Rds on Drain Source Resistance | 85 mOhms | 85 mOhms | 85 mOhms | 460 mOhms |
| Rise Time | 4.1 ns | 4.1 ns | 4.1 ns | 2.8 ns |
| Action |
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