Diodes Incorporated DMN6069SE-13 MOSFETs
MOSFET N-CH 60V 4.3A/10A SOT223
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN6069SE-13
Detailed Description
MOSFET N-CH 60V 4.3A/10A SOT223
Package
SOT-223
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN6069SE-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
4.3 A
Rds on Drain Source Resistance
69 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN6069SE-13 vs DMN61D8LVTQ-7 vs DMN3016LPS-13 vs DMN2028USS-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Dual | Single | Single |
| Fall Time | 5.3 ns | 440 ns | 5.6 ns | 12.33 ns |
| ID Continuous Drain Current | 4.3 A | 630 mA | 10.8 A | 9.8 A |
| Package | SOT-223-3 | SOT-23-6 | PowerTDFN-8 | SOIC-8 |
| Pd Power Dissipation | 11 W | 1.09 W | 1.18 W | 1.56 W |
| Qg Gate Charge | 16 nC | 740 pC | 25.1 nC | 11.6 nC |
| Rds on Drain Source Resistance | 69 mOhms | 1.1 Ohms | 16 mOhms | 20 mOhms |
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