Diodes Incorporated DMN6040SE-13 MOSFETs
MOSFET BVDSS: 41V 60V SOT223 T&R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN6040SE-13
Detailed Description
MOSFET BVDSS: 41V 60V SOT223 T&R
Package
SOT-223-3
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN6040SE-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
5 A
Rds on Drain Source Resistance
40 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN6040SE-13 vs DMN15H310SE-13 vs DMN6068SEQ-13 vs DMP45H21DHE-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-223-3 | SOT-223-3 | SOT-223-3 | SOT-223-3 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | -- |
| Number of Channels | 1 Channel | -- | 1 Channel | -- |
| Channel Mode | Enhancement | -- | Enhancement | -- |
| Configuration | Single | -- | Single | -- |
| ID Continuous Drain Current | 5 A | -- | 5.6 A | -- |
| Pd Power Dissipation | 2 W | -- | 3.7 W | -- |
| Qg Gate Charge | 22.4 nC | -- | 10.3 nC | -- |
| Rds on Drain Source Resistance | 40 mOhms | -- | 68 mOhms | -- |
| Technology | Si | -- | Si | -- |
| Action |
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