Diodes Incorporated DMN53D0LV-7 MOSFETs
MOSFET 2N-CH 50V 0.35A SOT563
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN53D0LV-7
Base Model
Detailed Description
MOSFET 2N-CH 50V 0.35A SOT563
Package
SOT563-6
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN53D0LV-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
50 V
ID Continuous Drain Current
350 mA
Rds on Drain Source Resistance
1.6 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN53D0LV-7 vs DMN53D0LT-7 vs DMN53D0LQ-7 vs DMN53D0LW-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT563-6 | SOT-523-3 | SOT23-3 | SC-70,SOT-323 |
| Technology | Si | Si | Si | Si |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Dual | -- | Single | Single |
| Fall Time | 11 ns | -- | 11 ns | 11 ns |
| ID Continuous Drain Current | 350 mA | -- | 500 mA | 360 mA |
| Pd Power Dissipation | 430 mW | -- | 540 mW | 420 mW |
| Qg Gate Charge | 600 pC | -- | 600 pC | 1.2 nC |
| Rds on Drain Source Resistance | 1.6 Ohms | -- | 1.6 Ohms | 2 Ohms |
| Action |
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