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Diodes Incorporated DMN26D0UFB4-7 MOSFETs

MOSFET N-CH 20V 230MA 3DFN

11,435 ActiveDiodes IncorporatedDMN26DDFN-3$0.24RoHS
DMN26D0UFB4-7 DFN-3 package illustration

Same model may have multiple batches, images only for reference.

DMN26D0UFB4-7
Part Number (MPN)
DMN26D0UFB4-7
Base Model
Detailed Description
MOSFET N-CH 20V 230MA 3DFN
Package
DFN-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Ordering Code Family

DMN26D groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN26D0UFB4-7 MOSFETs technical specifications.

General

Series
DMN26
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
240 mA
Rds on Drain Source Resistance
3 Ohms
Vgs Gate Source Voltage
- 12 V, + 12 V

Alternate Parts Comparison (DMN26D0UFB4-7 vs DMN26D0UDJ-7 vs DMN26D0UFB4-7B vs DMN26D0UT-7)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesCompliantYesYes
TechnologySiMOSFET (Metal Oxide)SiSi
SeriesDMN26DMN26--DMN26
Mounting TypeSMD/SMTSurface Mount--SMD/SMT
Number of Channels1 Channel2 Channel--1 Channel
Channel ModeEnhancementEnhancement--Enhancement
ConfigurationSingle2 N-Channel (Dual)--Single
Fall Time15.2 ns15.2 ns--15.2 ns
Forward Transconductance Min180 mS180 mS--242 mS
Maximum Operating Temperature C+ 150150--+ 150
Minimum Operating Temperature C- 55-55--- 55
PackageDFN-3--XFDFN-3SOT-523
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