Diodes Incorporated DMN24H11DS-7 MOSFETs
MOSFET N-CH 240V 270MA SOT23 T&R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN24H11DS-7
Base Model
Detailed Description
MOSFET N-CH 240V 270MA SOT23 T&R
Package
SOT23-3
Lifecycle Status
Active
Datasheet
DMN24H11DS-7 Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMN24H11DS-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
240 V
ID Continuous Drain Current
270 mA
Rds on Drain Source Resistance
11 Ohms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (DMN24H11DS-7 vs DMN24H3D5L-7 vs DMN6075S-7 vs DMN3730U-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 102.3 ns | 7.2 ns | 11 ns | 13 ns |
| Package | SOT23-3 | Tape & Reel (TR) | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 1.2 W | 1.26 W | 1.15 W | 710 mW |
| Qg Gate Charge | 3.7 nC | 6.6 nC | 12.3 nC | 1.6 nC |
| Rds on Drain Source Resistance | 11 Ohms | 3.5 Ohms | 85 mOhms | 460 mOhms |
| Rise Time | 4.7 ns | 2 ns | 4.1 ns | 2.8 ns |
| Technology | Si | MOSFET (Metal Oxide) | Si | Si |
| Action |
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