Diodes Incorporated DMN2055U-7 MOSFETs
MOSFET N-CH 20V 4.8A SOT23 T&R 3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2055U-7
Detailed Description
MOSFET N-CH 20V 4.8A SOT23 T&R 3
Package
SOT-23
Lifecycle Status
Active
RoHS State
RoHS3 Compliant
Datasheet
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Technical Specifications
Diodes Incorporated DMN2055U-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
4.8 A
Rds on Drain Source Resistance
38 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2055U-7 vs DMN53D0L-7 vs DMN3731U-7 vs DMN6075S-13)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 4.4 ns | 11 ns | 123 ns | 11 ns |
| ID Continuous Drain Current | 4.8 A | 500 mA | 900 mA | 2.5 A |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 1.2 W | 360 mW | 580 mW | 1.15 W |
| Qg Gate Charge | 4.3 nC | 1.2 nC | 5.5 nC | 12.3 nC |
| Rds on Drain Source Resistance | 38 mOhms | 1.6 Ohms | 730 mOhms | 120 mOhms |
| Rise Time | 2.7 ns | 2.5 ns | 3.1 ns | 4.1 ns |
| Action |
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