Diodes Incorporated DMN2024UTS-13 MOSFETs
MOSFET 2N-CH 20V 6.2A 8TSSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2024UTS-13
Detailed Description
MOSFET 2N-CH 20V 6.2A 8TSSOP
Package
TSSOP-8
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN2024UTS-13 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
6.2 A
Rds on Drain Source Resistance
24 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Alternate Parts Comparison (DMN2024UTS-13 vs DMN2016UTS-13 vs DMN2040LTS-13 vs DMN63D8LDWQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSSOP-8 | TSSOP-8 | TSSOP-8 | TSSOP-6 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 2 Channel | -- | -- | 2 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Dual | -- | -- | Dual |
| Fall Time | 245 ns | -- | -- | 6.3 ns, 6.3 ns |
| ID Continuous Drain Current | 6.2 A | -- | -- | 220 mA |
| Pd Power Dissipation | 1.39 W | -- | -- | 300 mW |
| Qg Gate Charge | 900 pC | -- | -- | 870 pC |
| Rds on Drain Source Resistance | 24 mOhms | -- | -- | 2.8 Ohms, 2.8 Ohms |
| Rise Time | 1024 ns | -- | -- | 3.2 ns, 3.2 ns |
| Action |
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