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Diodes Incorporated DMN2005LP4K-7 MOSFETs

MOSFET N-CH 20V 200MA 3DFN

435 ActiveDiodes IncorporatedDMN2005LP3-XFDFN$0.14
DMN2005LP4K-7 3-XFDFN package illustration

Same model may have multiple batches, images only for reference.

DMN2005LP4K-7
Part Number (MPN)
DMN2005LP4K-7
Base Model
Detailed Description
MOSFET N-CH 20V 200MA 3DFN
Package
3-XFDFN
Lifecycle Status
Active
Datasheet
PDF DMN2005LP4K-7 Datasheet
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Ordering Code Family

DMN2005LP groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Diodes Incorporated DMN2005LP4K-7 MOSFETs technical specifications.

General

Series
DMN2005
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
300 mA
Rds on Drain Source Resistance
650 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V

Alternate Parts Comparison (DMN2005LP4K-7 vs DMN2005LP4K-7B vs DMN2005LPK-7 vs DMN3016LPS-13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesDMN2005--DMN2005DMN3016
Mounting TypeSMD/SMTSurface MountSMD/SMTSMD/SMT
Number of Channels1 Channel--1 Channel1 Channel
RoHSYesCompliantYesYes
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleSingleSingleSingle
ID Continuous Drain Current300 mA--440 mA10.8 A
Package3-XFDFN--X1-DFN1006-3PowerTDFN-8
Pd Power Dissipation400 mW--450 mW1.18 W
Rds on Drain Source Resistance650 mOhms--1.5 Ohms16 mOhms
TechnologySi--SiSi
Transistor PolarityN-Channel--N-ChannelN-Channel
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