Diodes Incorporated DMN2004VK-7 MOSFETs
MOSFET 2N-CH 20V 0.54A SOT563
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMN2004VK-7
Base Model
Detailed Description
MOSFET 2N-CH 20V 0.54A SOT563
Package
SOT-563,SOT-666
Lifecycle Status
Active
Datasheet
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Technical Specifications
Diodes Incorporated DMN2004VK-7 MOSFETs technical specifications.
General
Series
DMN2004
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
540 mA
Rds on Drain Source Resistance
550 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (DMN2004VK-7 vs DMN2004VK-7B vs DMN601VK-7 vs DMN61D8LVTQ-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Dual | Dual |
| ID Continuous Drain Current | 540 mA | 540 mA | 800 mA | 630 mA |
| Package | SOT-563,SOT-666 | SOT-563-6 | SOT-563,SOT-666 | SOT-23-6 |
| Pd Power Dissipation | 250 mW | 250 W | 250 mW | 1.09 W |
| Rds on Drain Source Resistance | 550 mOhms | 550 mOhms | 3 Ohms | 1.1 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Action |
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