Diodes Incorporated DMMT5551S-7-F BJTs
TRANS 2NPN 160V 0.2A SOT26
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMMT5551S-7-F
Detailed Description
TRANS 2NPN 160V 0.2A SOT26
Package
SOT-23-6
Lifecycle Status
Active
Datasheet
DMMT5551S-7-F Datasheet
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Technical Specifications
Diodes Incorporated DMMT5551S-7-F BJTs technical specifications.
General
Series
DMMT5551
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Dual
Collector Emitter Voltage Vceo Max
160 V
Collector Base Voltage Vcbo
180 V
Emitter Base Voltage Vebo
6 V
Collector Emitter Saturation Voltage
200 mV
Alternate Parts Comparison (DMMT5551S-7-F vs DMMT5401-7-F vs DMMT3906-7-F vs DSS4160DS-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-23-6 | SOT-23-6 | SOT-23-6 | SOT-23-6 |
| Series | DMMT5551 | DMMT5401 | DMMT3906 | -- |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Collector Base Voltage Vcbo | 180 V | 160 V | 40 V | -- |
| Collector Emitter Saturation Voltage | 200 mV | 500 mV | 400 mV | -- |
| Collector Emitter Voltage Vceo Max | 160 V | 150 V | 40 V | -- |
| Configuration | Dual | Dual | Dual | -- |
| Dc Collector Base Gain Hfe Min | 30 at 50 mA, 5 V | 50 at - 1 mA, - 5 V | 30 at - 100 mA, - 1 V | -- |
| Emitter Base Voltage Vebo | 6 V | 5 V | 5 V | -- |
| Gain Bandwidth Product Ft | 300 MHz | 300 MHz | 250 MHz | -- |
| Maximum Dc Collector Current | 200 mA | 200 mA | 200 mA | -- |
| Action |
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