Diodes Incorporated DMG1012TQ-7 MOSFETs
MOSFET N-CH 20V 630MA SOT523
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DMG1012TQ-7
Detailed Description
MOSFET N-CH 20V 630MA SOT523
Package
SOT-523
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated DMG1012TQ-7 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
630 mA
Rds on Drain Source Resistance
400 mOhms
Vgs Gate Source Voltage
- 6 V, + 6 V
Threshold Voltage
500 mV
Alternate Parts Comparison (DMG1012TQ-7 vs DMG1012T-7 vs DMG1012T-13 vs DMG1013T-7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | SOT-523 | Tape & Reel (TR) | SOT-523 | SOT-523 |
| Mounting Type | SMD/SMT | Surface Mount | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| Fall Time | 12.3 ns | 12.3 ns | -- | 20.7 ns |
| Maximum Operating Temperature C | + 150 | 150 | -- | + 150 |
| Minimum Operating Temperature C | - 55 | -55 | -- | - 55 |
| Pd Power Dissipation | 280 mW | 280 mW | -- | 270 mW |
| Qg Gate Charge | 736.6 pC | 736.6 pC | -- | 622.4 pC |
| Rds on Drain Source Resistance | 400 mOhms | 400 mOhms | -- | 1 Ohms |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
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Single N−Channel Small Signal MOSFET with ESD Protection 20V, 915mA, 230mΩ, 3000-REEL
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