Diodes Incorporated BCP5616TC BJTs
TRANS NPN 80V 1A SOT223-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BCP5616TC
Detailed Description
TRANS NPN 80V 1A SOT223-3
Package
SOT-223-4
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Diodes Incorporated BCP5616TC BJTs technical specifications.
General
RoHS
Yes
Feature Type
NPN
Feature Configuration
Single Dual Collector
Feature Number of Elements Per Chip
1
Feature Maximum Collector Base Voltage V
100
Feature Maximum Collector Emitter Voltage V
80
Feature Maximum Emitter Base Voltage V
5
Feature Maximum Dc Collector Current a
1
Feature Minimum Dc Current Gain
25@5mA@2V|40@150mA@2V|25@500mA@2V|100@150mA@2V
Feature Maximum Power Dissipation Mw
2000
Alternate Parts Comparison (BCP5616TC vs BCP5310TA vs BCP51TA vs BCP53TA)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-223-4 | SOT-223-4 | SOT-223-4 | SOT-223-4 |
| Series | -- | BCP53 | BCP51 | BCP53 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 65°C ~ + 150°C | - 65°C ~ + 150°C | - 65°C ~ + 150°C |
| Collector Base Voltage Vcbo | -- | 100 V | 45 V | 100 V |
| Collector Emitter Saturation Voltage | -- | 500 mV | 500 mV | 500 mV |
| Collector Emitter Voltage Vceo Max | -- | 80 V | 45 V | 80 V |
| Configuration | -- | Single | Single | Single |
| Dc Collector Base Gain Hfe Min | -- | 63 at 150 mA, 2 V | 25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V | 40 |
| Dc Current Gain Hfe Max | -- | 63 | 40 | 250 |
| Emitter Base Voltage Vebo | -- | 5 V | 5 V | 5 V |
| Action |
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