Skip to main content

Broadcom AT-42010 RF BJT

AT-42010 by Broadcom · RF BJT · 4-SMD (100 mil)

In StockBroadcom4-SMD (100 mil)
AT-42010 4-SMD (100 mil) package illustration

Same model may have multiple batches, images only for reference.

AT-42010
Manufacturer
Part Number (MPN)
AT-42010
Package
4-SMD (100 mil)
Lifecycle Status
Obsolete
Datasheet
PDF AT-42010 Datasheet
Quick Jump:
Ready to order?In stock and ready to ship.
Competitive Pricing
Fast & Reliable Delivery
Quality Assured

Technical Specifications

Broadcom AT-42010 RF BJT technical specifications.

General

RoHS
Yes
Package / Case
4-SMD
Mounting Type
Surface Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Power Max
600mW
Transistor Type
NPN
Current Collector IC Max
80mA
Voltage Collector Emitter Breakdown Max
12V
Dc Current Gain Hfe Min IC Vce
30 @ 35mA, 8V

Alternate Parts Comparison (AT-42010 vs AT-41532-TR1 vs AT-32011-TR2G vs AT-30511-TR1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case4-SMDSC-70, SOT-323TO-253-4, TO-253AATO-253-4, TO-253AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature200°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max80mA50mA32mA8mA
Dc Current Gain Hfe Min IC Vce30 @ 35mA, 8V30 @ 5mA, 5V70 @ 2mA, 2.7V70 @ 1mA, 2.7V
Gain10dB ~ 13.5dB9dB ~ 15.5dB12.5dB ~ 14dB14dB ~ 16dB
Noise Figure Db Typ F1.9dB ~ 3dB @ 2GHz ~ 4GHz1dB ~ 1.9dB @ 900MHz ~ 2.4GHz1dB ~ 1.3dB @ 900MHz1.1dB ~ 1.4dB @ 900MHz
Power Max600mW225mW200mW100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12V12V5.5V5.5V
Action

More Parts in RF BJT

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.