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Broadcom AT-42000-GP4 RF BJT

AT-42000-GP4 by Broadcom · RF BJT · Die

In StockBroadcomDie
AT-42000-GP4 Die package illustration

Same model may have multiple batches, images only for reference.

AT-42000-GP4
Manufacturer
Part Number (MPN)
AT-42000-GP4
Package
Die
Lifecycle Status
Obsolete
Datasheet
PDF AT-42000-GP4 Datasheet
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Technical Specifications

Broadcom AT-42000-GP4 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
9GHz
Noise Figure Db Typ F
1.9dB ~ 3dB @ 2GHz ~ 4GHz
Gain
10.5dB ~ 14dB
Power Max
600mW

Alternate Parts Comparison (AT-42000-GP4 vs AT-41532-TR1 vs AT-32011-TR2G vs AT-30511-TR1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature200°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max80mA50mA32mA8mA
Dc Current Gain Hfe Min IC Vce30 @ 35mA, 8V30 @ 5mA, 5V70 @ 2mA, 2.7V70 @ 1mA, 2.7V
Gain10.5dB ~ 14dB9dB ~ 15.5dB12.5dB ~ 14dB14dB ~ 16dB
Noise Figure Db Typ F1.9dB ~ 3dB @ 2GHz ~ 4GHz1dB ~ 1.9dB @ 900MHz ~ 2.4GHz1dB ~ 1.3dB @ 900MHz1.1dB ~ 1.4dB @ 900MHz
PackageDieSC-70,SOT-323TO-253-4, TO-253AATO-253-4,TO-253AA
Power Max600mW225mW200mW100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12V12V5.5V5.5V
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