Winbond Electronics W9412G6KH-4 DRAM
DRAM Memory IC 128Mbit Parallel 250 MHz 2.4V ~ 2.7V 66-TSOP II
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W9412G6KH-4
Detailed Description
IC DRAM 128MBIT PAR 66TSOP II
Package
66-TSOP II
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
W9412G6KH-4 Datasheet
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Technical Specifications
Winbond Electronics W9412G6KH-4 DRAM technical specifications.
General
Memory Size
128 Mbit
RoHS
ROHS3 Compliant
Package / Case
66-TSSOP
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C (TA)
Supply Voltage
2.4V ~ 2.7V
Lifecycle Status
Obsolete
Max Frequency
250 MHz
Memory Type
Volatile
Alternate Parts Comparison (W9412G6KH-4 vs W9825G6KH-6 vs W9464G6KH-5 vs W634GU6QB-11)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 70°C (TA) | 0 ~ 70 | 0°C ~ 70°C (TA) | 0°C ~ 95°C (TC) |
| Supply Voltage | 2.4V ~ 2.7V | 3 ~ 3.6 | 2.3V ~ 2.7V | 1.283V ~ 1.45V |
| Memory Size | 128 Mbit | 256M | 64M | 4Gbit |
| RoHS | ROHS3 Compliant | Compliant | Compliant | ROHS3 Compliant |
| Lifecycle Status | Obsolete | Active | Active | Last Time Buy |
| Package / Case | 66-TSSOP | -- | 66-TSSOP | 96-VFBGA |
| Access Time | 48 ns | -- | 55 ns | 20 ns |
| Max Frequency | 250 MHz | -- | 200 MHz | 933 MHz |
| Memory Format | DRAM | -- | DRAM | DRAM |
| Memory Interface | Parallel | -- | Parallel | Parallel |
| Memory Type | Volatile | -- | Volatile | Volatile |
| Action |
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