Winbond Electronics W66CQ2NQQAGJ DRAM
DRAM Memory IC 4Gbit LVSTL_11 1.867 GHz 1.06V ~ 1.17V, 1.7V ~ 1.95V 200-TFBGA (10x14.5)

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W66CQ2NQQAGJ
Detailed Description
4GB LPDDR4X, DDP, X32, 1866MHZ,
Package
200-TFBGA (10x14.5)
Lifecycle Status
Active
Datasheet
W66CQ2NQQAGJ Datasheet
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Technical Specifications
Winbond Electronics W66CQ2NQQAGJ DRAM technical specifications.
General
Memory Size
4Gbit
Maximum Clock Frequency
2.133 GHz
Package / Case
200-TFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 105°C (TC)
Supply Voltage
1.06V ~ 1.17V, 1.7V ~ 1.95V
Lifecycle Status
Active
Max Frequency
1.867 GHz
Memory Interface
LVSTL_11
Alternate Parts Comparison (W66CQ2NQQAGJ vs W66AP6NBQAFJ vs W66BP6NBQAFJ vs W66AQ6NBQAFJ)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Manufacturer | -- | -- | -- | -- |
| Package / Case | 200-TFBGA | 200-TFBGA | 200-TFBGA | 200-TFBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) |
| Supply Voltage | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Memory Size | 4Gbit | 1Gbit | 2Gbit | 1Gbit |
| Maximum Clock Frequency | 2.133 GHz | 2.133 GHz | 2.133 GHz | 2.133 GHz |
| Lifecycle Status | Active | Active | Active | Active |
| Access Time | 3.6 ns | 3.6 ns | 3.6 ns | 3.6 ns |
| Max Frequency | 1.867 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz |
| Memory Format | DRAM | DRAM | DRAM | DRAM |
| Memory Interface | LVSTL_11 | LVSTL_11 | LVSTL_11 | LVSTL_06 |
| Action |
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