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Vishay VSSB410S-M3/52T Rectifier Diodes

DIODE SCHOTTKY 100V 1.9A DO214AA

705 ActiveVishayVSSB410SDO-214AA (SMB)$0.66
VSSB410S-M3/52T DO-214AA (SMB) package illustration

Same model may have multiple batches, images only for reference.

VSSB410S-M3/52T
Manufacturer
Part Number (MPN)
VSSB410S-M3/52T
Base Model
Detailed Description
DIODE SCHOTTKY 100V 1.9A DO214AA
Package
DO-214AA (SMB)
Lifecycle Status
Active
Datasheet
PDF VSSB410S-M3/52T Datasheet
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Ordering Code Family

VSSB410S groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Vishay VSSB410S-M3/52T Rectifier Diodes technical specifications.

General

Series
TMBS®
RoHS
Yes
Package / Case
DO-214AA
Mounting Type
Surface Mount
Lifecycle Status
Active
Average Rectified Current
1.9 A
Capacitance Vr F
230pF @ 4V, 1MHz
Current Average Rectified IO
1.9A (DC)
Current Reverse Leakage Vr
250 µA @ 100 V
Diode Type
Schottky

Related Parts Comparison (VSSB410S-M3/52T vs VSSB410S-E3/52T vs VSSB310-M3/52T vs VS-10BQ100-M3/5BT)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSMD/SMT
RoHSYesYes with ExemptionYesYes
SeriesTMBS®TMBS®TMBS®--
Package / CaseDO-214AASMBDO-214AA--
Lifecycle StatusActiveActiveActive--
Average Rectified Current1.9 A1.9 A1.9 A--
Capacitance Vr F230pF @ 4V, 1MHz230pF @ 4V, 1MHz230pF @ 4V, 1MHz--
Current Average Rectified IO1.9A (DC)1.9A (DC)1.9 A--
Current Reverse Leakage Vr250 µA @ 100 V250 µA @ 100 V250 µA @ 100 V--
Diode TypeSchottkySchottkySchottky--
Max Reverse Voltage Dc100 V100 V100 V--
SpeedFast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)--
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