Vishay SM8S33AHE3_A/I TVS Diodes
5200W 33V Unidirectional TVS Diode, Silicon, DO-218AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SM8S33AHE3_A/I
Category
Detailed Description
5200W 33V Unidirectional TVS Diode, Silicon, DO-218AB
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SM8S33AHE3_A/I TVS Diodes technical specifications.
General
RoHS
Yes
Number of Pins
1
Operating Temperature
-55 ~ 175
Breakdown Voltage
36.7 V
Breakdown Voltage Max
40.6
Breakdown Voltage Min
36.7
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Jedec Package Code
DO-218AB
Military Spec
No
Alternate Parts Comparison (SM8S33AHE3_A/I vs SM8S36ATHE3/I vs SMF5V0A-E3-08 vs SMBJ3V3-E3/52)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Breakdown Voltage | 36.7 V | 40 V | 6.4 V | 4.1 V |
| Polarity | UNIDIRECTIONAL | Unidirectional | Unidirectional | Unidirectional |
| Series | -- | SM8S_AT | SMF | SMBJ3V3 |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Clamping Voltage | -- | 58.1 V | 9.2 V | 7.3 V |
| Ipp Peak Pulse Current | -- | 114 A | 21.7 A | 50 A |
| Maximum Operating Temperature C | -- | + 175 | + 175 | + 150 |
| Minimum Operating Temperature C | -- | - 55 | - 65 | - 55 |
| Package | -- | DO-218AC | DO-219AB | DO214AA-2 |
| Power Consumption | -- | 6.6 kW | 200 W | 600 W |
| Reference Voltage | -- | 1.8 V | 2.5 V | 3.5 V |
| Action |
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