Vishay 1N4150W-E3-08 Rectifier Diodes
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
1N4150W-E3-08
Base Model
Detailed Description
Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
Package
SOD-123
Lifecycle Status
Active
Datasheet
1N4150W-E3-08 Datasheet
Quick Jump:
Technical Specifications
Vishay 1N4150W-E3-08 Rectifier Diodes technical specifications.
General
RoHS
Yes
Package / Case
SOD-123
Mounting Type
Surface Mount
Operating Temperature
-55 °C ~ 150 °C
Lifecycle Status
Active
Average Rectified Current
200 mA
Capacitance Vr F
2.5pF @ 0V, 1MHz
Current Average Rectified IO
200 mA
Current Reverse Leakage Vr
100 nA @ 50 V
Diode Type
Standard
Alternate Parts Comparison (1N4150W-E3-08 vs LL4148-GS08 vs S1M-E3/61T)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55 °C ~ 150 °C | -65 °C ~ 175 °C | -55 °C ~ 150 °C |
| RoHS | Yes | Compliant | Compliant |
| Lifecycle Status | Active | Production | Production |
| Average Rectified Current | 200 mA | 300 mA | 1 A |
| Element Configuration | Single | Single | Single |
| Forward Current | 200 mA | 150 mA | 1 A |
| Max Repetitive Reverse Voltage Vrrm | 50 V | 100 V | 1 kV |
| Max Reverse Voltage Dc | 50 V | 75 V | 1 kV |
| Radiation Hardening | No | No | No |
| Recovery Time | 4 ns | 8 ns | 1.8 µs |
| Reverse Recovery Time | 4 ns | 8 ns | 1.8 µs |
| Action |
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