Toshiba TC58NYG0S3EBAI4 Flash Memory
NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin TFBGA / TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TC58NYG0S3EBAI4
Detailed Description
NAND Flash Parallel 1.8V 1G-bit 128M x 8 63-Pin TFBGA / TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Package
TFBGA-63
Lifecycle Status
Obsolete
Datasheet
TC58NYG0S3EBAI4 Datasheet
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Technical Specifications
Toshiba TC58NYG0S3EBAI4 Flash Memory technical specifications.
General
RoHS
Yes
Number of Pins
63
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Estimated Eol Date
2022
Family
Memory
Family Name
TC58NYG0S3EBAI4
Cell Type
NAND
Chip Density Bit
1G
Architecture
Sectored
Related Parts Comparison (TC58NYG0S3EBAI4 vs TC55NEM208ATGN70 vs TC58128AFTI vs TC58NVM9S3ETA00)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Number of Pins | 63 | 32 | 48 | 48 |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Number of Words | 128M | 512000 | 1.6777216e+07 | -- |
| Operating Temperature | -- | -40 °C ~ 85 °C | -40 °C ~ 85 °C | 0 °C ~ 70 °C |
| Supply Voltage | -- | 5 V | 3.3 V | 3.3 V |
| Interface | -- | Parallel | Parallel, Serial | Serial |
| Access Time | -- | 70 ns | 35 ns | 30 µs |
| Address Bus Width | -- | 19 b | 24 b | 1 b |
| Density | -- | 4 Mb | 128 Mb | 512 Mb |
| Memory Type | -- | RAM, SRAM | FLASH, NAND | NAND, SLC NAND |
| Nominal Supply Current | -- | 35 mA | 30 mA | 30 mA |
| Action |
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