Toshiba TC55VCM316BTGN55LA SRAM
SRAM Memory IC 7.6 MB Parallel
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TC55VCM316BTGN55LA
Detailed Description
IC SRAM 8MBIT 55NS 48TSOP
Package
Bulk
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
TC55VCM316BTGN55LA Datasheet
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Technical Specifications
Toshiba TC55VCM316BTGN55LA SRAM technical specifications.
General
Interface
Parallel
Memory Size
7.6 MB
RoHS
Compliant
Packaging
Bulk
Mounting Type
SMD (SMT)
Operating Temperature
-40 °C ~ 85 °C
Access Time
55 ns
Frequency
55 GHz
Lead Free
Yes
Memory Type
RAM, SRAM
Related Parts Comparison (TC55VCM316BTGN55LA vs TC7SH14FU,LJ(CT vs TC7SH04FU,LJ(CT vs TC7SH08FU,LJ(CT)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD (SMT) | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40 °C ~ 85 °C | -40°C ~ 85°C | -40°C ~ 85°C | -40°C ~ 85°C |
| RoHS | Compliant | Yes | Yes | Yes |
| Series | -- | TC7SH | TC7SH | TC7SH |
| Package / Case | -- | 5-TSSOP | 5-TSSOP | 5-TSSOP |
| Supply Voltage | -- | 2V ~ 5.5V | 2V ~ 5.5V | 2V ~ 5.5V |
| Lifecycle Status | -- | Active | Active | Active |
| Current Output High Low | -- | 8mA, 8mA | 8mA, 8mA | 8mA, 8mA |
| Current Quiescent Max | -- | 2 µA | 2 µA | 2 µA |
| Input Logic Level High | -- | 2.2V ~ 3.85V | 1.5V | 1.5V |
| Input Logic Level Low | -- | 0.9V ~ 1.65V | 0.5V | 0.5V |
| Logic Type | -- | Inverter | Inverter | AND Gate |
| Action |
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