Texas Instruments TPS1120D Transistors
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TPS1120D
Category
Detailed Description
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW. Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
Package
SOIC
Key Features
Package: SOIC
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
TPS1120D Datasheet
Quick Jump:
Technical Specifications
Texas Instruments TPS1120D Transistors technical specifications.
General
RoHS
Yes
Packaging
Rail/Tube
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C
Package
SOIC
Continuous Drain Current ID
1.17A
Current Rating
-1.7A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
400mR
Drain to Source Voltage Vdss
15V
Alternate Parts Comparison (TPS1120D vs TPS54292PWP vs TPS72018DRVR vs TPS72012DRVR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC | HTSSOP EP | WSON EP | WSON EP |
| Radiation Hardening | No | No | No | No |
| Polarity | P-CHANNEL | -- | Positive | Positive |
| Package / Case | -- | 16-PowerTSSOP | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad |
| Number of Pins | -- | 16 | 6 | 6 |
| AEC Qualified | -- | No | No | No |
| Automotive | -- | No | No | No |
| Basic Package Type | -- | Lead-Frame SMT | Non-Lead-Frame SMT | Non-Lead-Frame SMT |
| Cage Code | -- | 01295 | 01295 | 01295 |
| Action |
Texas Instruments TPS1120D Transistors Overview
Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW.
Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
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