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Texas Instruments TPS1100D Transistors

Single P-channel enhancement-mode MOSFET for surface mount applications.

5,000 ActiveTexas InstrumentsSOIC$1.92RoHS
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TPS1100D
Manufacturer
Part Number (MPN)
TPS1100D
Category
Discrete SemiconductorsTransistorsTexas Instruments TPS1100D
Detailed Description
Single P-channel enhancement-mode MOSFET for surface mount applications. Features a continuous drain current of 1.6A and a drain-to-source breakdown voltage of -15V. Offers a low on-state resistance of 180mR and fast switching times with a fall time of 10ns. Packaged in an 8-SOIC with dimensions of 4.9mm length, 3.91mm width, and 1.75mm height. Operates within a temperature range of -40°C to 125°C and is RoHS compliant.
Package
SOIC
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF TPS1100D Datasheet
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Technical Specifications

Texas Instruments TPS1100D Transistors technical specifications.

General

RoHS
Yes
Packaging
Rail/Tube
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C
Package
SOIC
Continuous Drain Current ID
1.6A
Current Rating
-1.6A
Drain to Source Breakdown Voltage
-15V
Drain to Source Resistance
180mR
Drain to Source Voltage Vdss
15V

Alternate Parts Comparison (TPS1100D vs TPS54292PWP vs TPS72018DRVR vs TPS72012DRVR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C-40°C ~ 125°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
Output Voltage-15V0.8 to 14V1.8V1.2V
PackageSOICHTSSOP EPWSON EPWSON EP
Radiation HardeningNoNoNoNo
PolarityP-CHANNEL--PositivePositive
Package / Case--16-PowerTSSOP6-WDFN Exposed Pad6-WDFN Exposed Pad
Number of Pins--1666
AEC Qualified--NoNoNo
Automotive--NoNoNo
Basic Package Type--Lead-Frame SMTNon-Lead-Frame SMTNon-Lead-Frame SMT
Action

Texas Instruments TPS1100D Transistors Overview

Single P-channel enhancement-mode MOSFET for surface mount applications. Features a continuous drain current of 1.6A and a drain-to-source breakdown voltage of -15V. Offers a low on-state resistance of 180mR and fast switching times with a fall time of 10ns. Packaged in an 8-SOIC with dimensions of 4.9mm length, 3.91mm width, and 1.75mm height.

Operates within a temperature range of -40°C to 125°C and is RoHS compliant.

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