Texas Instruments CSD25303W1015 Transistors
P-Channel NexFET Power MOSFET 6-DSBGA -55 to 150
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD25303W1015
Category
Detailed Description
Package
--
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
CSD25303W1015 Datasheet
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Technical Specifications
Texas Instruments CSD25303W1015 Transistors technical specifications.
General
Continuous Drain Current ID
3A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
56mR
Drain to Source Voltage Vdss
20V
Fall Time
7.8ns
Gate to Source Voltage Vgs
8V
Input Capacitance
435pF
Lead Free
Contains Lead
Max Operating Temp
150°C
Min Operating Temp
-55°C
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