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Texas Instruments TPS1101DR Transistors

Single P-channel Enhancement-Mode MOSFET 8-SOIC

6,300 ActiveTexas InstrumentsSOIC$1.03RoHS
TPS1101DR - No Image Available

Same model may have multiple batches, images only for reference.

TPS1101DR
Manufacturer
Part Number (MPN)
TPS1101DR
Category
Discrete SemiconductorsTransistorsTexas Instruments TPS1101DR
Detailed Description
Single P-channel Enhancement-Mode MOSFET 8-SOIC
Package
SOIC
Key Features
Package: SOIC
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF TPS1101DR Datasheet
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Technical Specifications

Texas Instruments TPS1101DR Transistors technical specifications.

General

RoHS
Yes
Packaging
Tape and Reel
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C
Package
SOIC
Continuous Drain Current ID
2.3A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
90mR
Drain to Source Voltage Vdss
15V
Fall Time
5.5ns

Alternate Parts Comparison (TPS1101DR vs TPS54292PWP vs TPS72018DRVR vs TPS72012DRVR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C-40°C ~ 125°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
PackageSOICHTSSOP EPWSON EPWSON EP
Radiation HardeningNoNoNoNo
PolarityP-CHANNEL--PositivePositive
Package / Case--16-PowerTSSOP6-WDFN Exposed Pad6-WDFN Exposed Pad
Number of Pins--1666
AEC Qualified--NoNoNo
Automotive--NoNoNo
Basic Package Type--Lead-Frame SMTNon-Lead-Frame SMTNon-Lead-Frame SMT
Cage Code--012950129501295
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