Texas Instruments TPS1101DR Transistors
Single P-channel Enhancement-Mode MOSFET 8-SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TPS1101DR
Category
Detailed Description
Package
SOIC
Key Features
Package: SOIC
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
TPS1101DR Datasheet
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Technical Specifications
Texas Instruments TPS1101DR Transistors technical specifications.
General
Package
SOIC
Continuous Drain Current ID
2.3A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
90mR
Drain to Source Voltage Vdss
15V
Fall Time
5.5ns
Gate to Source Voltage Vgs
2V
Lead Free
Lead Free
Max Operating Temp
125°C
Min Operating Temp
-40°C
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