Texas Instruments JBP28S42MJ Memory Integrated Circuit
512x8 Bi-Polar PROM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JBP28S42MJ
Detailed Description
512x8 Bi-Polar PROM
Package
20-CDIP (0.300", 7.62mm)
Key Features
Package / Case: 20-CDIP (0.300", 7.62mm); Mounting Type: Through Hole
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
JBP28S42MJ Datasheet
Quick Jump:
Technical Specifications
Texas Instruments JBP28S42MJ Memory Integrated Circuit technical specifications.
General
Memory Size
4Kbit
RoHS
Yes
Package / Case
20-CDIP
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 125°C (TA)
Supply Voltage
4.5V ~ 5.5V
Lifecycle Status
Active
Memory Type
Non-Volatile
Access Time
70 ns
Memory Format
PROM
Alternate Parts Comparison (JBP28S42MJ vs JBP28L42MJ vs JBP18S030MJ vs XC17S100AVO8I)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 20-CDIP | 20-CDIP | 16-CDIP | 8-SOIC |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Operating Temperature | -55°C ~ 125°C (TA) | -55°C ~ 125°C (TA) | -55°C ~ 125°C (TA) | -40°C ~ 85°C |
| Supply Voltage | 4.5V ~ 5.5V | 4.5V ~ 5.5V | 4.5V ~ 5.5V | 3.3 |
| Memory Size | 4Kbit | 4Kbit | 256bit | 1MB |
| RoHS | Yes | Yes | Yes | No |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Memory Type | Non-Volatile | Non-Volatile | Non-Volatile | EEPROM |
| Package | CDIP (J)-20 | CDIP (J)-20 | CDIP (J)-16 | 8-SOIC |
| Access Time | 70 ns | 110 ns | 50 ns | -- |
| Memory Format | PROM | PROM | PROM | -- |
| Memory Interface | Parallel | Parallel | Parallel | -- |
| Action |
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