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Texas Instruments DRV5012AEDMRR Magnetic Sensors

Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch 4-X2SON -40 to 85

4,705 ActiveTexas InstrumentsXFDFN-4$0.60
DRV5012AEDMRR XFDFN-4 package illustration

Same model may have multiple batches, images only for reference.

DRV5012AEDMRR
Manufacturer
Part Number (MPN)
DRV5012AEDMRR
Detailed Description
Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch 4-X2SON -40 to 85
Package
XFDFN-4
Lifecycle Status
Active
Datasheet
PDF DRV5012AEDMRR Datasheet
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Technical Specifications

Texas Instruments DRV5012AEDMRR Magnetic Sensors technical specifications.

General

Series
DRV5012
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 40°C ~ + 85°C
Supply Voltage
1.65 V ~ 5.5 V
Type
Digital Hall Effect Sensor
Operating Supply Current
160 uA
Maximum Output Current
5 mA
Operating Point Min Max
0.6 mT to 3.3 mT
Release Point Min Max Brp
- 3.3 mT to - 0.6 mT

Alternate Parts Comparison (DRV5012AEDMRR vs DRV134UAE4 vs DRV5053VAQDBZR vs DRV8935PRGER)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 40°C ~ + 85°C-55°C ~ 125°C (TA)-40 °C ~ 125 °C-40°C ~ 150°C (TJ)
Supply Voltage1.65 V ~ 5.5 V18V2.5 V ~ 38 V4.5V ~ 33V
RoHSYesYesCompliantYes
PackageXFDFN-4SOICSOT-23VQFN (RGE)-24
Lifecycle Status--ActiveProductionActive
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