Texas Instruments BQ2022DBZR Memory Integrated Circuit
IC EPROM 1KBIT SGL WIRE SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BQ2022DBZR
Detailed Description
IC EPROM 1KBIT SGL WIRE SOT23-3
Package
TO-236-3, SC-59, SOT-23-3
Key Features
Package / Case: TO-236-3, SC-59, SOT-23-3; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
BQ2022DBZR Datasheet
Quick Jump:
Technical Specifications
Texas Instruments BQ2022DBZR Memory Integrated Circuit technical specifications.
General
Interface
Serial, 1-WIRE
Memory Size
1Kb (256b x 4 pages)
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
2.65V ~ 5.5V
Technology
EPROM - OTP
Memory Type
Non-Volatile
Memory Format
EPROM
Alternate Parts Comparison (BQ2022DBZR vs BQ4015LYMA-70N vs BQ4010YMA-150N vs BQ4010MA-70)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 32-DIP Module | 28-DIP Module | 28-DIP Module |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Supply Voltage | 2.65V ~ 5.5V | 3V ~ 3.6V | 4.5V ~ 5.5V | 4.75V ~ 5.5V |
| Memory Size | 1Kb (256b x 4 pages) | 4 Mbit | 64Kbit | 64Kbit |
| Interface | Serial, 1-WIRE | Parallel | Parallel | Parallel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Memory Format | EPROM | NVSRAM | NVSRAM | NVSRAM |
| Memory Interface | Single Wire | Parallel | Parallel | Parallel |
| Memory Type | Non-Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Technology | EPROM - OTP | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Number of Pins | -- | 32 | 28 | 28 |
| Action |
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