STMicroelectronics STPSC10065DLF Rectifier Diodes
DIODE SIL CARB 650V 10A PWRFLAT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC10065DLF
Detailed Description
DIODE SIL CARB 650V 10A PWRFLAT
Package
4-PowerVDFN
Lifecycle Status
Obsolete
Datasheet
STPSC10065DLF Datasheet
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Technical Specifications
STMicroelectronics STPSC10065DLF Rectifier Diodes technical specifications.
General
Series
ECOPACK®2
Package / Case
4-PowerVDFN
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
130 µA @ 650 V
Capacitance Vr F
670pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Related Parts Comparison (STPSC10065DLF vs STPSC10H065DLF vs STPSC10H12DY vs STPSC20065DY)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | 4-PowerVDFN | 4-PowerVDFN | TO-220-2 | TO-220-2 |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Through Hole |
| Lifecycle Status | Obsolete | Active | Obsolete | Active |
| Capacitance Vr F | 670pF @ 0V, 1MHz | 595pF @ 0V, 1MHz | 725pF @ 0V, 1MHz | 1250pF @ 0V, 1MHz |
| Current Average Rectified IO | 10A | 10A | 10A | 20A |
| Current Reverse Leakage Vr | 130 µA @ 650 V | 100 µA @ 650 V | 60 µA @ 1200 V | 150 µA @ 600 V |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 0 ns | 0 ns |
| Speed | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 1200 V | 650 V |
| Voltage Forward Vf Max If | 1.45 V @ 10 A | 1.55 V @ 10 A | 1.5 V @ 10 A | 1.45 V @ 20 A |
| Action |
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