Samsung Semiconductor K4B1G1646I-BYMA000 DRAM
DDR3-1866 1GB (64MX16)1.07NS CL1
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G1646I-BYMA000
Detailed Description
Package
96-TFBGA
Key Features
Package: Tray; Package / Case: 96-TFBGA; Mounting Type: Surface Mount; Supply Voltage: 1.35V; Memory Size: 1Gbit
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
K4B1G1646I-BYMA000 Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G1646I-BYMA000 DRAM technical specifications.
General
Max Frequency
933 MHz
Operating Temperature
0°C ~ 95°C
Memory Interface
Parallel
Memory Organization
64M x 16
Mounting Type
Surface Mount
Memory Type
Volatile
Lifecycle Status
Active
Memory Size
1Gbit
Package / Case
96-TFBGA
Supply Voltage
1.35V
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