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Renesas R1RW0416DGE-2PI#B1 Memory Integrated Circuit

IC SRAM 4MBIT PARALLEL 44SOJ

51,355 ActiveRenesas44-BSOJ (0.400", 10.16mm Width)RoHS
R1RW0416DGE-2PI#B1 44-BSOJ (0.400", 10.16mm Width) package illustration

Same model may have multiple batches, images only for reference.

R1RW0416DGE-2PI#B1
Manufacturer
Part Number (MPN)
R1RW0416DGE-2PI#B1
Detailed Description
IC SRAM 4MBIT PARALLEL 44SOJ
Package
44-BSOJ (0.400", 10.16mm Width)
Key Features
Package / Case: 44-BSOJ (0.400", 10.16mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF R1RW0416DGE-2PI#B1 Datasheet
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Technical Specifications

Renesas R1RW0416DGE-2PI#B1 Memory Integrated Circuit technical specifications.

General

Memory Size
4Mb (256K x 16)
RoHS
ROHS3 Compliant
Package / Case
44-BSOJ
Packaging
Tube
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
3V ~ 3.6V
Lifecycle Status
Active
Technology
SRAM
Memory Type
Volatile

Related Parts Comparison (R1RW0416DGE-2PI#B1 vs 71V016SA20YG8 vs 71V416S12YG8 vs 71016S20YGI8)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case44-BSOJ44-BSOJ44-BSOJ44-BSOJ
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 85°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)-40°C ~ 85°C (TA)
Supply Voltage3V ~ 3.6V3V ~ 3.6V3V ~ 3.6V4.5V ~ 5.5V
Memory Size4Mb (256K x 16)1Mb (64K x 16)4Mb (256K x 16)1Mb (64K x 16)
RoHSROHS3 CompliantROHS3 CompliantROHS3 CompliantROHS3 Compliant
Lifecycle StatusActiveObsoleteObsoleteObsolete
Access Time12 ns20 ns12 ns20 ns
Memory FormatSRAMSRAMSRAMSRAM
Memory InterfaceParallelParallelParallelParallel
Memory Organization256K x 1664K x 16256K x 1664K x 16
Memory TypeVolatileVolatileVolatileVolatile
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