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Renesas M10042040054X0PWAY Memory Integrated Circuit

IC RAM 4MBIT 54MHZ 8DFN

2,844 ActiveRenesas8-WDFN Exposed PadRoHS
M10042040054X0PWAY - No Image Available

Same model may have multiple batches, images only for reference.

M10042040054X0PWAY
Manufacturer
Part Number (MPN)
M10042040054X0PWAY
Detailed Description
IC RAM 4MBIT 54MHZ 8DFN
Package
8-WDFN Exposed Pad
Key Features
Package / Case: 8-WDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF M10042040054X0PWAY Datasheet
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Technical Specifications

Renesas M10042040054X0PWAY Memory Integrated Circuit technical specifications.

General

Memory Size
4Mb (1M x 4)
Package / Case
8-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 105°C
Supply Voltage
1.71V ~ 2V
Technology
MRAM (Magnetoresistive RAM)
Memory Type
Non-Volatile
Max Frequency
54 MHz
Memory Format
RAM

Alternate Parts Comparison (M10042040054X0PWAY vs M30082040108X0IWAY vs M10042040108X0PWAY vs M10082040108X0IWAY)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-WDFN Exposed Pad8-WDFN Exposed Pad8-WDFN Exposed Pad8-WDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 105°C-40°C ~ 85°C-40°C ~ 105°C-40°C ~ 85°C
Supply Voltage1.71V ~ 2V2.7V ~ 3.6V1.71V ~ 2V1.71V ~ 2V
Memory Size4Mb (1M x 4)8Mb (2M x 4)4Mb (1M x 4)8Mb (2M x 4)
Max Frequency54 MHz108 MHz108 MHz108 MHz
Memory FormatRAMRAMRAMRAM
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
TechnologyMRAM (Magnetoresistive RAM)MRAM (Magnetoresistive RAM)MRAM (Magnetoresistive RAM)MRAM (Magnetoresistive RAM)
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