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Renesas ISL95808IRZ-T Gate Drivers

Half Bridge MOSFET 2A 4.5V~5.5V 2A DFN-8(2x2) Gate Drive ICs

18,744 ActiveRenesas8-VFDFN Exposed PadRoHS
ISL95808IRZ-T - No Image Available

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ISL95808IRZ-T
Manufacturer
Part Number (MPN)
ISL95808IRZ-T
Detailed Description
Half Bridge MOSFET 2A 4.5V~5.5V 2A DFN-8(2x2) Gate Drive ICs
Package
8-VFDFN Exposed Pad
Key Features
Package / Case: 8-VFDFN Exposed Pad
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF ISL95808IRZ-T Datasheet
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Technical Specifications

Renesas ISL95808IRZ-T Gate Drivers technical specifications.

General

Package / Case
8-VFDFN Exposed Pad
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
4.5V ~ 5.5V
Input Type
Non-Inverting
Channel Type
Synchronous
Gate Type
N-Channel MOSFET
Numberof Drivers
2
Rise Fall Time Typ
8ns, 8ns
Driven Configuration
Half-Bridge
Current Peak Output Source Sink
2A, 2A

Alternate Parts Comparison (ISL95808IRZ-T vs ISL89164FRTCZ vs ISL6208FHRZ-TS2378 vs ISL6625AIRZ-T)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-VFDFN Exposed Pad8-VFDFN Exposed Pad8-VFDFN Exposed Pad8-VFDFN Exposed Pad
Operating Temperature-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TA)-40°C ~ 125°C (TJ)
Supply Voltage4.5V ~ 5.5V7.5V ~ 16V4.5V ~ 5.5V5.5V ~ 13.2V
Channel TypeSynchronousIndependentSynchronousSynchronous
Current Peak Output Source Sink2A, 2A6A, 6A2A, 2A-, 3A
Driven ConfigurationHalf-BridgeLow-SideHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
Input TypeNon-InvertingInvertingNon-InvertingNon-Inverting
Rise Fall Time Typ8ns, 8ns20ns, 20ns8ns, 8ns31ns, 18ns
High Side Voltage Max Bootstrap33 V--33 V36 V
Mounting Type--Surface MountSurface MountSurface Mount
Number of Drivers--222
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