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Renesas IDT6116LA35TPG Memory Integrated Circuit

IC SRAM 16KBIT PARALLEL 24DIP

4,602Renesas24-DIP (0.300", 7.62mm)RoHS
IDT6116LA35TPG - No Image Available

Same model may have multiple batches, images only for reference.

IDT6116LA35TPG
Manufacturer
Part Number (MPN)
IDT6116LA35TPG
Detailed Description
IC SRAM 16KBIT PARALLEL 24DIP
Package
24-DIP (0.300", 7.62mm)
Key Features
Package / Case: 24-DIP (0.300", 7.62mm); Mounting Type: Through Hole
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF IDT6116LA35TPG Datasheet
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Technical Specifications

Renesas IDT6116LA35TPG Memory Integrated Circuit technical specifications.

General

Memory Size
16Kb (2K x 8)
Package / Case
24-DIP
Mounting Type
Through Hole
Operating Temperature
0°C ~ 70°C (TA)
Supply Voltage
4.5V ~ 5.5V
Lifecycle Status
Obsolete
Technology
SRAM - Asynchronous
Memory Type
Volatile
Access Time
35 ns
Memory Format
SRAM

Alternate Parts Comparison (IDT6116LA35TPG vs IDT6116LA45TP vs IDT6116SA45TP vs IDT6116SA20TP)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case24-DIP24-DIP24-DIP24-DIP
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature0°C ~ 70°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)
Supply Voltage4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V
Memory Size16Kb (2K x 8)16Kb (2K x 8)16Kb (2K x 8)16Kb (2K x 8)
Access Time35 ns45 ns45 ns20 ns
Memory FormatSRAMSRAMSRAMSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeVolatileVolatileVolatileVolatile
TechnologySRAM - AsynchronousSRAM - AsynchronousSRAM - AsynchronousSRAM - Asynchronous
Write Cycle Time Word Page35ns45ns45ns20ns
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
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