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Renesas 7164S85TDB Memory Integrated Circuit

IC SRAM 64KBIT PARALLEL 28CDIP

48,571 ActiveRenesas28-CDIP (0.300", 7.62mm)RoHS
7164S85TDB - No Image Available

Same model may have multiple batches, images only for reference.

7164S85TDB
Manufacturer
Part Number (MPN)
7164S85TDB
Detailed Description
IC SRAM 64KBIT PARALLEL 28CDIP
Package
28-CDIP (0.300", 7.62mm)
Key Features
Package / Case: 28-CDIP (0.300", 7.62mm); Mounting Type: Through Hole
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 7164S85TDB Datasheet
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Technical Specifications

Renesas 7164S85TDB Memory Integrated Circuit technical specifications.

General

Memory Size
64Kb (8K x 8)
Package / Case
28-CDIP
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 125°C (TA)
Supply Voltage
4.5V ~ 5.5V
Lifecycle Status
Active
Technology
SRAM - Asynchronous
Memory Type
Volatile
Access Time
85 ns
Memory Format
SRAM

Alternate Parts Comparison (7164S85TDB vs 5962-8866202NA vs 5962-3829415MZA vs 5962-8855204UA)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case28-CDIP28-CDIP28-CDIP28-CDIP
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 125°C (TA)-55°C ~ 125°C (TA)-55°C ~ 125°C (TA)-55°C ~ 125°C (TA)
Supply Voltage4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V
Memory Size64Kb (8K x 8)256Kb (32K x 8)64Kb (8K x 8)256Kb (32K x 8)
Access Time85 ns70 ns25 ns45 ns
Memory FormatSRAMSRAMSRAMSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeVolatileVolatileVolatileVolatile
TechnologySRAM - AsynchronousSRAM - SynchronousSRAM - SynchronousSRAM - Synchronous
Write Cycle Time Word Page85ns70ns25ns45ns
Lifecycle StatusActiveObsoleteLast Time BuyObsolete
Action

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