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Renesas 71256S100DB Memory Integrated Circuit

IC SRAM 256KBIT PAR 28CERDIP

2,508 ActiveRenesas28-CDIP (0.600", 15.24mm)RoHS
71256S100DB - No Image Available

Same model may have multiple batches, images only for reference.

71256S100DB
Manufacturer
Part Number (MPN)
71256S100DB
Detailed Description
IC SRAM 256KBIT PAR 28CERDIP
Package
28-CDIP (0.600", 15.24mm)
Key Features
Package / Case: 28-CDIP (0.600", 15.24mm); Mounting Type: Through Hole
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 71256S100DB Datasheet
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Technical Specifications

Renesas 71256S100DB Memory Integrated Circuit technical specifications.

General

Series
71256
Memory Size
256Kb (32K x 8)
RoHS
RoHS non-compliant
Package / Case
28-CDIP
Packaging
Tube
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 125°C (TA)
Supply Voltage
4.5V ~ 5.5V
Lifecycle Status
Active
Technology
SRAM - Asynchronous

Alternate Parts Comparison (71256S100DB vs 5962-8855206XA vs 5962-8552512XA vs 7164L20DB)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case28-CDIP28-CDIP28-CDIP28-CDIP
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 125°C (TA)-55°C ~ 125°C (TA)-55°C ~ 125°C (TA)-55°C ~ 125°C (TA)
Supply Voltage4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V
Memory Size256Kb (32K x 8)256Kb (32K x 8)64Kb (8K x 8)64Kb (8K x 8)
Access Time100 ns25 ns85 ns20 ns
Memory FormatSRAMSRAMSRAMSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeVolatileVolatileVolatileVolatile
TechnologySRAM - AsynchronousSRAM - SynchronousSRAM - SynchronousSRAM - Asynchronous
Write Cycle Time Word Page100ns25ns85ns20ns
Action

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