onsemi NE5532D8R2G Microcontrollers
Dual Op Amp, 10MHz, 20V, SOIC-8, Low Noise
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NE5532D8R2G
Detailed Description
Dual Op Amp, 10MHz, 20V, SOIC-8, Low Noise
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Active
Datasheet
NE5532D8R2G Datasheet
Quick Jump:
Technical Specifications
onsemi NE5532D8R2G Microcontrollers technical specifications.
General
RoHS
Yes
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 70°C (TA)
Lifecycle Status
Active
Current Supply
8mA
Number of Circuits
2
Amplifier Type
General Purpose
Current Output Channel
38 mA
Slew Rate
9V/µs
Alternate Parts Comparison (NE5532D8R2G vs LP2951ACD-3.0R2G vs MC33275D-5.0R2G vs MC78L08ACDR2G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 70°C (TA) | -40°C ~ 125°C | -40°C ~ 125°C | 0°C ~ 125°C |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Package | SOIC-8 | SOIC-8 | SOIC-8 | SOIC-8 |
| Case Outline | 751-07 | 751-07 | -- | 751-07 |
| Compliance | PbAHP | PbAHP | -- | PbAHP |
| Container Qty | 2500 | 2500 | -- | 2500 |
| Container Type | REEL | REEL | -- | REEL |
| Iq Typ Ma | 4 | 0.093 | -- | 3 |
| MSL Temp C | 260 | 260 | -- | 260 |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
This part is listed as a cross for
Directonsemi
Pin YesPkg YesElec Yes
Dual Op Amp, 5.5MHz BW, Bipolar, SOIC, 20V
Directonsemi
Pin YesPkg YesElec Yes
2-Ch Op Amp, 10MHz, 15V, 800nA IB, 500uV Vos, 8-SOIC
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