onsemi NCV57001FDWR2G Microcontrollers
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation Isolated High Current IGBT Gate Driver, 1000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NCV57001FDWR2G
Detailed Description
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation Isolated High Current IGBT Gate Driver, 1000-REEL
Package
16-SOIC (0.295", 7.50mm Width)
Lifecycle Status
Active
Datasheet
NCV57001FDWR2G Datasheet
Quick Jump:
Technical Specifications
onsemi NCV57001FDWR2G Microcontrollers technical specifications.
General
Number of Channels
1
Package / Case
16-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Lifecycle Status
Active
Current Output High Low
7.8A, 7.1A
Current Peak Output
6A
Voltage Output Supply
0V ~ 24V
Grade
Automotive
Technology
Capacitive Coupling
Alternate Parts Comparison (NCV57001FDWR2G vs NCV84120DR2G vs NCV6323BMTAAWTBG vs NCV6323DMTAATBG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | -- | Automotive, AEC-Q100 | Automotive, AEC-Q100 | Automotive, AEC-Q100 |
| Package / Case | 16-SOIC | 8-SOIC | 8-WFDFN Exposed Pad | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount, Wettable Flank | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TA) |
| Number of Outputs | -- | 1 | 1 | 1 |
| Output Configuration | -- | High Side | Positive | Positive |
| Output Type | -- | N-Channel | Adjustable | Adjustable |
| Switching Frequency | -- | -- | 3MHz | 3MHz |
| Functions | -- | -- | Step-Down | Step-Down |
| Max Input Voltage | -- | -- | 5.5V | 5.5V |
| Min Input Voltage | -- | -- | 2.5V | 2.5V |
| Output Current | -- | -- | 2A | 2A |
| Action |
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