onsemi NCD57200DR2G Gate Drivers
1.9A, 2.3A Gate Driver Capacitive Coupling 1 Channel 8-SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NCD57200DR2G
Detailed Description
HALF BRIDGE GATE DRIVER (ISOLATE
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
NCD57200DR2G Datasheet
Quick Jump:
Technical Specifications
onsemi NCD57200DR2G Gate Drivers technical specifications.
General
Number of Channels
1
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TA)
Supply Voltage
20V
Lifecycle Status
Active
Input Type
Non-Inverting
Channel Type
Single
Driven Configuration
Half-Bridge
Number of Drivers
2
Alternate Parts Comparison (NCD57200DR2G vs FAN7081MX-GF085 vs NCP3418ADR2G vs NCP3418DR2G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | 0°C ~ 150°C (TJ) | 0°C ~ 150°C (TJ) |
| Supply Voltage | 20V | 10V ~ 20V | 4.6V ~ 13.2V | 4.6V ~ 13.2V |
| Channel Type | Single | Single | Synchronous | Synchronous |
| Driven Configuration | Half-Bridge | High-Side | Half-Bridge | Half-Bridge |
| Gate Type | IGBT | IGBT, N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Input Type | Non-Inverting | Inverting | Non-Inverting | Non-Inverting |
| Number of Drivers | 2 | 1 | 2 | 2 |
| Rise Fall Time Typ | 13ns, 8ns | 15ns, 10ns | 18ns, 10ns | 18ns, 10ns |
| Logic Voltage - VIL, VIH | 0.9V, 2.4V | -- | 0.8V, 2V | 0.8V, 2V |
| High Side Voltage Max Bootstrap | -- | 600 V | 30 V | 30 V |
| Action |
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