onsemi NCD5701BDR2G Microcontrollers
IGBT Gate Drivers, High-Current, Stand-Alone, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NCD5701BDR2G
Detailed Description
IGBT Gate Drivers, High-Current, Stand-Alone, 2500-REEL
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Active
Datasheet
NCD5701BDR2G Datasheet
Quick Jump:
Technical Specifications
onsemi NCD5701BDR2G Microcontrollers technical specifications.
General
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
20V
Channel Type
Single
Driven Configuration
Low-Side
Number of Drivers
1
Gate Type
IGBT
Current Peak Output Source Sink
7.8A, 6.8A
Rise Fall Time Typ
18ns, 19ns
Alternate Parts Comparison (NCD5701BDR2G vs MC33201VDR2G vs LM2904EDR2G vs MC33071DR2G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) | -55°C ~ 125°C | -40°C ~ 105°C | -40°C ~ 85°C |
| Amplifier Type | -- | General Purpose | General Purpose | General Purpose |
| Current Input Bias | -- | 80 nA | 45 nA | 100 nA |
| Current Output Channel | -- | 80 mA | 40 mA | 30 mA |
| Current Supply | -- | 900µA | 1.5mA (x2 Channels) | 1.9mA |
| Gain Bandwidth Product | -- | 2.2 MHz | 1 MHz | 4.5 MHz |
| Number of Circuits | -- | 1 | 2 | 1 |
| Slew Rate | -- | 1V/µs | 0.6V/µs | 13V/µs |
| Voltage Input Offset | -- | 6 mV | 2 mV | 1 mV |
| Voltage Supply Span Max | -- | 12 V | 32 V | 44 V |
| Action |
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