onsemi NCD57001DWR2G Microcontrollers
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation, 1000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NCD57001DWR2G
Detailed Description
Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation, 1000-REEL
Package
16-SOIC (0.295", 7.50mm Width)
Lifecycle Status
Active
Datasheet
NCD57001DWR2G Datasheet
Quick Jump:
Technical Specifications
onsemi NCD57001DWR2G Microcontrollers technical specifications.
General
Number of Channels
1
Package / Case
16-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
24V
Lifecycle Status
Active
Input Type
Inverting, Non-Inverting
Channel Type
Single
Driven Configuration
Half-Bridge
Number of Drivers
1
Alternate Parts Comparison (NCD57001DWR2G vs MC74HC4053ADWR2G vs MC14518BDWR2G vs MC14520BDWR2G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 16-SOIC | 16-SOIC | 16-SOIC | 16-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) | -55°C ~ 125°C (TA) | -55°C ~ 125°C | -55°C ~ 125°C |
| Supply Voltage | 24V | -- | 3 V ~ 18 V | 3 V ~ 18 V |
| Channel Type | Single | -- | -- | -- |
| Current Peak Output Source Sink | 7.8A, 7.1A | -- | -- | -- |
| Driven Configuration | Half-Bridge | -- | -- | -- |
| Gate Type | IGBT | -- | -- | -- |
| Input Type | Inverting, Non-Inverting | -- | -- | -- |
| Number of Drivers | 1 | -- | -- | -- |
| Rise Fall Time Typ | 10ns, 15ns | -- | -- | -- |
| Count Rate | -- | -- | 8 MHz | 8 MHz |
| Action |
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