onsemi FFSD1065A Rectifier Diodes
SiC Diode - 650V, 10A, DPAK, 2500-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSD1065A
Detailed Description
SiC Diode - 650V, 10A, DPAK, 2500-REEL
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
FFSD1065A Datasheet
Quick Jump:
Technical Specifications
onsemi FFSD1065A Rectifier Diodes technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
200 µA @ 650 V
Capacitance Vr F
575pF @ 1V, 100kHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Current Average Rectified IO
18A
Operating Temperature Junction
-55°C ~ 175°C
Alternate Parts Comparison (FFSD1065A vs FFSD10120A vs 1N4148WS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | SC-90, SOD-323F |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Production |
| Capacitance Vr F | 575pF @ 1V, 100kHz | 612pF @ 1V, 100kHz | 4pF @ 0V, 1MHz |
| Current Reverse Leakage Vr | 200 µA @ 650 V | 200 µA @ 1200 V | 5 µA @ 75 V |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 4 ns |
| Speed | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Small Signal =< 200mA (Io), Any Speed |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Standard |
| Voltage Dc Reverse Vr Max | 650 V | 1200 V | 75 V |
| Voltage Forward Vf Max If | 1.75 V @ 10 A | 1.75 V @ 10 A | 1 V @ 10 mA |
| Action |
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